Taiwan researchers engineer interface only 0.42 nm thick to improve next-gen MoS2 transistors

Researchers at National Yang Ming Chiao Tung University and TSMC have developed an interface just point four two nanometers thick for advanced transistors, Times of India reports. Made of aluminum oxide between monolayer molybdenum disulfide and hafnium oxide, this design maintains strong electrical control and carrier transport despite using an extremely thin insulating layer.

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